2SC5007 Datasheet, PDF (1/10 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC5007
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The 2SC5007 is an NPN epitaxial silicon transistor designed for use in low noise and small signal amplifiers from
VHF band to UHF band. Low noise figure, high gain, and high current capability achieve a very wide dynamic range
and excellent linearity. This is achieved by direct nitride passivated base surface, process (NEST2 process) which
is an NEC proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT : 7.0 GHz TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Low Cre : 0.45 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF : 1.4 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• High |S21e|²: 12 dB TYP. (@ VCE = 3 V, IC = 7 mA, f = 1 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
2SC5007
2SC5007-T1
QUANTITY
50 pcs./Unit
3 kpcs./Reel
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in millimeters
1.6 ± 0.1
0.8 ± 0.1
2
3
1
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
125
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150 ˚ C
1. Emitter
2. Base
3. Collector
Document No. P10386EJ2V0DS00 (2nd edition)
(Previous No. TD-2400)
Date Published July 1995 P
Printed in Japan
©
1993