2SC4959 Datasheet, PDF (1/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC4959
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
SUPER MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.4 pF TYP.
ORDERING INFORMATION
PART
NUMBER
QUANTITY
PACKING STYLE
2SC4959–T1
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin3 (Collector) face to perfora-
tion side of the tape.
2SC4959–T2
3 Kpcs/Reel.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face
to perforation side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample.
Unit sample quantity shall be 50 pcs. (Part No.: 2SC4959)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
VCBO
9
V
VCEO
6
V
VEBO
2
V
IC
30
mA
PT
150
mW
Tj
150
°C
Tstg
–65 to +150
°C
PACKAGE DIMENSIONS
in millimeters
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Document No. P10382EJ2V0DS00 (2nd edition)
(Previous No. TD-2410)
Date Published July 1995 P
Printed in Japan
Caution; Electrostatic sensitive Device.
The mark 5 shows revised points.
©
1995₂