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2SC4956 Datasheet, PDF (1/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD | |||
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DATA SHEET
SILICON TRANSISTOR
2SC4956
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
4 PINS MINI MOLD
FEATURES
⢠Low Noise, High Gain
⢠Low Voltage Operation
⢠Low Feedback Capacitance
Cre = 0.20 pF TYP.
ORDERING INFORMATION
PART
NUMBER
2SC4956-T1
2SC4956-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Base), Pin4 (Emitter) face to perforation
side of the tape.
Embossed tape 8 mm wide.
Pin1 (Collector), Pin2 (Emitter) face to perfora-
tion side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4956)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ËC)
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60
mW
Junction Temperature
Tj
150
ËC
Storage Temperature
Tstg
â65 to +150
ËC
PACKAGE DIMENSIONS
in millimeters
2.8
+0.2
â0.3
1.5
+0.2
â0.1
5Ë 5Ë
5Ë 5Ë
PIN CONNECTIONS
1. Collector
2. Emitter
3. Base
4. Emitter
Caution; Electrostatic Sensitive Device.
The information in this document is subject to change without notice.
Document No. P10378EJ2V0DS00 (2nd edition)
(Previous No. TD-2407)
Date Published July 1995 P
Printed in Japan
©
1993
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