2SC4954 Datasheet, PDF (1/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC4954
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• Low Noise, High Gain
• Low Voltage Operation
• Low Feedback Capacitance
Cre = 0.3 pF TYP.
ORDERING INFORMATION
PART
NUMBER
2SC4954-T1
2SC4954-T2
QUANTITY
3 Kpcs/Reel.
3 Kpcs/Reel.
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side of the
tape.
Embossed tape 8 mm wide.
Pin1 (Emitter), Pin2 (Base) face to perforation
side of the tape.
* Please contact with responsible NEC person, if you require evaluation
sample. Unit sample quantity shall be 50 pcs. (Part No.: 2SC4954)
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
10
mA
Total Power Dissipation
PT
60
mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
PACKAGE DIMENSIONS
in millimeters
2.8±0.2
1.5
0.65
+0.1
–0.15
2
3
1
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
Caution; Electrostatic Sensitive Device.
The information in this document is subject to change without notice.
Document No. P10376EJ2V0DS00 (2nd edition)
(Previous No. TD-2405)
Date Published July 1995 P
Printed in Japan
©
1993