2SC4942 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

DATA SHEET
SILICON TRANSISTORS
2SC4942
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC4942 is a transistor developed for high-speed high-
voltage switching. This transistor is ideal for use in switching
devices such as switching regulators and DC/DC converters.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• New package with dimensions in between those of small
signal and power signal package
• High voltage
• Fast switching speed
• Complementary transistor with the 2SA1871
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor
Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the
devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ID(DC)
ID(pulse)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms, duty cycle ≤ 50 %
7.5 cm² × 0.7 mm ceramic board mounted
Electrode connection
1. Emitter
2. Collector
3. Base
Ratings
Unit
600
V
600
V
7.0
V
1.0
A
2.0
A
2.0
W
150
°C
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16152EJ1V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928