2SC4885 Datasheet, PDF (1/12 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4885
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS SUPER MINI MOLD
FEATURES
• Excellent Low NF in Low Frequency Band
• Low Voltage Use
• Low Cob : 0.9 pF TYP.
• Low Noise Voltage : 90 mV TYP.
• Super Mini Mold Package. EIAJ : SC-70
ABSOLUTE MAXIMUM RATINGS (Ta = 25
C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage VCEO
13
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
50
mA
Total Power Dissipation
PT
120
mW
Junction Temperature
Tj
125

C
Storage Temperature
Tstg
55 to +125
C
PACKAGE DIMENSIONS
(Units: mm)
2.1±0.1
1.25±0.1
2
1
3
Marking
ELECTRICAL CHARACTERISTICS (Ta = 25
C)
PARAMETER
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
Collector to Base Saturation Voltage VCE (sat)
DC Current Gain
hFE
60
Gain Bandwidth Product
fT
2.5
3.5
Collecter Capacitance
Insertion Power Gain
Cob
0.8

S21e
²
7.0
9.0
Noise Figure
NF
3.0
Noise Voltage
NV
90
*1 Pulse Measurement PW  350
s, Duty Cycle  2 %
hFE Classification
Rank
R13
Marking
R13
hFE
60 to 150
MAX.
0.1
0.1
0.3
150
1.2
200
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
UNIT
TEST CONDITIONS

A VCB = 15 V, IE = 0

A VEB = 2 V, IC = 0
V hFE = 10, IC = 5 mA
VCE = 5 V, IC = 5 mA ^*1
GHz VCE = 5 V, IC = 5 mA
pF VCB = 5 V, IE = 0, f = 1 MHz
dB VCE = 5 V, IC = 5 mA, f = 1 GHz
dB VCE = 5 V, IC = 5 mA, f = 1 GHz
mV See Test Cirucit
Document No. P10410EJ2V0DS00 (2nd edition)
(Previous No, TC-2365)
Date Published March 1997 N
Printed in Japan
©
1993