2SC4814 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC4814
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4814 is a power transistor featuring low-saturation voltage and high hFE. This transistor is ideal for high-
precision control such as PWM control for pulse motors or brushless motors in OA and FA equipment and for
solenoid driving in automotive equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Low VCE(sat): VCE(sat) ≤ 0.3 V
@IC = 1.5 A, IB = 10 mA
• High hFE: hFE = 300 to 1,200 @VCE = 2.0 V, IC = 1.0 A
• On-chip dumper-diode
• Auto-mounting possible in radial taping specifications
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 µs, duty cycle ≤ 10%
Ta = 25°C
Ratings
Unit
120
V
100
V
7.0
V
±2.5
A
±5.0
A
1.0
A
1.8
W
150
°C
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15604EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928