2SC4811 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4811
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4811 is a high-speed Darlington power transistor. This transistor is ideal for high-precision control such
as PWM control for pulse motors or brushless motors in OA and FA equipment.
In addition, this transistor features a package that can be auto-mounted in radial taping specifications, thus
contributing to mounting cost reduction.
FEATURES
• Auto-mounting possible in radial taping specifications
• Resin-molded insulation type package with power rating of 1.8 W in stand-alone conditions
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±8.0
A
Collector current (pulse)
IC(pulse)*
±16
A
Base current (DC)
IB(DC)
0.8
A
Total power dissipation
PT**
1.8
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
** Ta = 25°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15602EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928