2SC4783 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
2SC4783
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4783 is NPN silicon epitaxial transistor.
FEATURES
• High DC current gain: hFE2 = 200 TYP.
• High voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage
VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
Collector Current (pulse) ^Note1
Total Power Dissipation (TA = 25°C) ^Note2
IC(DC)
IC(pulse)
PT
100
mA
200
mA
200
mW
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 3.0 cm² x 0.64 mm
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05
0.1
+0.1
–0.05
3
2
1
0.2
+0.1
–0
0.5 0.5
1.0
1.6 ± 0.1
1: Emitter
2: Base
3: Collector
0 to 0.1
0.6
0.75 ± 0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO
VCB = 60 V, IE = 0
Emitter Cut-off Current
DC Current Gain ^Note
IEBO
VEB = 5.0 V, IC = 0
hFE1 VCE = 6.0 V, IC = 0.1 mA
Base to Emitter Voltage ^Note
Collector Saturation Voltage ^Note
Base Saturation Voltage ^Note
hFE2
VBE
VCE(sat)
VBE(sat)
VCE = 6.0 V, IC = 1.0 mA
VCE = 6.0 V, IC = 1.0 mA
IC = 100 mA, IB = 10 mA
IC = 100 mA, IB = 10 mA
Gain Bandwidth Product
fT
VCE = 6.0 V, IE = −10 mA
Output Capacitance
Cob
VCE = 6.0 V, IE = 0, f = 1.0 MHz
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
MIN. TYP. MAX. UNIT
100 nA
100 nA
50
−
90 200 600 −
0.62
V
0.15 0.3 V
0.86 1.0 V
150 250
MHz
3.0 4.0 pF
hFE CLASSFICATION
Marking
L4
hFE2
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15616EJ1V0DS00 (1st edition)
Date Published July 2001 NS CP(K)
©
Printed in Japan
2001