2SC4703 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DATA SHEET
SILICON TRANSISTOR
2SC4703
MICROWAVE LOW NOISE, LOW DISTORTION AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC4703 is designed for low distortion, low noise RF amplifier
operating with low supply voltage (VCE = 5 V). This low distortion
characteristic makes it suitable for CATV, tele-communication and other
use. It employs surface mount type plastic package, Power Mini Mold
(SOT-89).
FEATURES
• Low distortion at low supply voltage.
IM2
55 dB TYP., IM3
76 dB TYP.
@VCE = 5 V, IC = 50 mA, VO = 105 dB
/75
• Large PT with surface mount type package.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2.5
V
Collector Current
IC
150
mA
Total Power Dissipation
PT
1.8
W
Junction Temperature
Tj
150
C
Storage Temperature
Tstg

55 to +150 C
* 0.7 mm  16 cm² double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
ECB
0.42
±0.06
0.42±0.06
1.5 0.47
±0.06
3.0
0.41
−0.03
+0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
Document No. P10375EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
1994