2SC4554 Datasheet, PDF (1/6 Pages) List of Unclassifed Manufacturers – 2SC4554

DATA SHEET
SILICON POWER TRANSISTOR
2SC4554
NPN SILICON EPITAXIAL TRANSISTOR
FOR SWITCHING
The 2SC4554 is a power transistor designed especially for low
collector saturation voltage and features large current switching at a
low power dissipation.
In addition, a high hFE enables alleviation of the driver load.
FEATURES
• High hFE and low VCE(sat):
hFE ≅ 800 (VCE = 2 V, IC = 5 A)
VCE(sat) ≅ 0.12 V (IC = 5 A, IB = 0.05 A)
• On-chip C to E damper diode
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
100
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
±15
A
Collector current (pulse)
IC(pulse)*
±22
A
Base current (DC)
IB(DC)
4.0
A
Total power dissipation
PT (Tc = 25°C)
35
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
EQUIVALENT CIRCUIT
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15600EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928