2SC4552 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed for high-speed
switching and features low VCE(sat) and high hFE. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = 2 V, IC = 3 A)
VCE(sat) ≤ 0.3 V (IC = 8 A, IB = 0.4 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
100
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
15
A
Collector current (pulse)
IC(pulse)*
30
A
Base current (DC)
IB(DC)
7.5
A
Total power dissipation
PT (Tc = 25°C)
30
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928