2SC4536 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC4536
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL
TRANSISTOR
DESCRIPTION
The 2SC4536 is designed for use in middle power, low distortion low
noise figure RF amplifier. It features excellent linearity and large dynamic
range, which make it suitable for CATV, telecommunication, and other use,
it employs plastic surface mount type package (SOT-89).
FEATURES
• Low Distortion
IM2 = 57.5 dB TYP. @ VCE = 10 V, IC = 50 mA
IM3 = 82 dB TYP. @ VCE = 10 V, IC = 50 mA
• Low Noise
NF = 1.5 dB TYP. @ VCE = 10 V, IC = 10 mA, f = 1 GHz
• Power Mini Mold Package Used. High Power Dissipation.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Maximum Voltage and Current (TA = 25
C)
Collector to Base Voltage
VCBO
30
V
Collector to Emitter Voltage
VCEO
15
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
250
mA
Maximum Power Dissipation
Total Power Dissipation
at 25
C Ambient Temperature PT*
2.0
W
Maximum Temperatures
Junction Temperature
Tj
150

C
Storage Temperature Range Tstg
65 to +150
C
* 0.7 mm  16 cm² double sided ceramic substrate. (Copper plating)
PACKAGE DIMENSIONS
(Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
ECB
0.42
±0.06
0.42±0.06
1.5 0.47
±0.06
3.0
0.41
−0.03
+0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
Document No. P10369EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
1994