2SC4351 Datasheet, PDF (1/6 Pages) NEC – DARLINGTON POWER TRANSISTOR

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SC4351
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SC4351 is a high-speed Darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse motors or blushless motor of OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• On-chip C to B constant voltage diode for surge voltage
absorption
• On-chip C to E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
60 ± 10
V
Collector to emitter voltage
VCEO
60 ± 10
V
Emitter to base voltage
VEBO
8.0
V
Collector current (DC)
IC(DC)
±5.0
A
Collector current (pulse)
IC(pulse)*
±10
A
Base current (DC)
IB(DC)
0.5
A
Total power dissipation
PT (Tc = 25°C)
20
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15594EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928