2SC4332 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTORS
2SC4332, 2SC4332-Z
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4332 and 2SC4332-Z are mold power transistors
developed for high-speed switching and features a very low
collector-to-emitter saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
PACKAGE DRAWING (Unit: mm)
FEATURES
• Low collector saturation voltage
VCE(sat) = 0.3 V MAX. (IC = 3 A / IB = 0.15 A)
• Fast switching speed:
tf ≤ 0.3 µs MAX. (IC = 3 A)
• High DC current gain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
100
V
Collector to Emitter Voltage
VCEO
60
V
Base to Emitter Voltage
VEBO
7.0
V
Collector Current (DC)
Collector Current (pulse)
IC(DC)
IC(pulse)^Note1
5.0
A
10
A
Base Current (DC)
IB(DC)
2.5
A
Total Power Dissipation
Total Power Dissipation
PT (TC = 25°C)
15
W
PT (TA = 25°C) 1.0^Note2, 2.0^Note3 W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−55 to +150 °C
Notes 1. PW ≤ 10 ms, duty cycle ≤ 50%
2. Printing borard mounted
3. 7.5 mm² x 0.7 mm, ceramic board mounted
Electrode Connection
1. Base
2. Collector
3. Emitter
4. Fin (collector)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16430EJ1V0DS00 (1st edition)
Date Published October 2002 NS CP(K)
Printed in Japan
©
2002