2SC3604 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC3604
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3604 is an NPN epitaxial transistor designed for low-
noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
FEATURES
• Low noise
: NF = 1.6 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 12 dB TYP. @ f = 2.0 GHz
3.8 MIN.
C
3.8 MIN.
B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATING
VCBO
20
VCEO
10
VEBO
1.5
IC
65
PT (TC = 25 °C)
580
Tj
200
Tstg
-65 to +150
UNIT
V
V
V
mA
mW
°C
°C
45 °
E
0.5 ± 0.05
2.55 ± 0.2
φ 2.1
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
TEST CONDITIONS
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
VCE = 8 V, IC = 20 mA Pulse
fT
VCE = 8 V, IC = 20 mA
Cre
NF^Note
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 8 V, IC = 7 mA, f = 2.0 GHz
|S21e|² VCE = 8 V, IC = 20 mA, f = 2.0 GHz
MAG VCE = 8 V, IC = 20 mA, f = 2.0 GHz
GA
VCE = 8 V, IC = 7 mA, f = 2.0 GHz
MIN.
50
9.0
TYP.
100
8
0.2
1.6
11
13
12
MAX.
1.0
1.0
250
0.7
2.3
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
Document No. P11675EJ2V0DS00 (2nd edition)
Date Published August 1996 P
Printed in Japan
©
1996