2SC3603 Datasheet, PDF (1/8 Pages) NEC – NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION

DATA SHEET
SILICON TRANSISTOR
2SC3603
NPN EPITAXIAL SILICON TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
The 2SC3603 is an NPN epitaxial transistor designed for low-
noise amplification at 0.5 to 4.0 GHz. This transistor has low-noise
and high-gain characteristics in a wide collector current region, and
has a wide dynamic range.
PACKAGE DIMENSIONS (in mm)
E
FEATURES
• Low noise
: NF = 2.1 dB TYP. @ f = 2.0 GHz
• High power gain : GA = 10 dB TYP. @ f = 2.0 GHz
3.8 MIN.
C
3.8 MIN.
B
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATING
VCBO
20
VCEO
12
VEBO
3
IC
100
PT (TC = 25 °C)
580
Tj
200
Tstg
-65 to +150
UNIT
V
V
V
mA
mW
°C
°C
45 °
E
0.5 ± 0.05
2.55 ± 0.2
φ 2.1
PIN CONNECTIONS
E: Emitter
C: Collector
B: Base
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Gain Bandwidth Product
Reverse Transfer Capacitance
Noise Figure
Insertion Gain
Maximum Available Gain
Power Gain
SYMBOL
TEST CONDITIONS
ICBO
VCB = 10 V, IE = 0
IEBO
VEB = 1 V, IC = 0
hFE
VCE = 10 V, IC = 20 mA Pulse
fT
VCE = 10 V, IC = 20 mA
Cre
NF^Note
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 10 V, IC = 7 mA, f = 2 GHz
|S21e|² VCE = 10 V, IC = 20 mA, f = 2 GHz
MAG VCE = 10 V, IC = 20 mA, f = 2 GHz
GA
VCE = 10 V, IC = 7 mA, f = 2 GHz
MIN.
50
7.0
10.0
TYP.
120
7
0.5
2.1
9.0
12.0
10
MAX.
1.0
1.0
300
1.0
3.4
UNIT
µA
µA
GHz
pF
dB
dB
dB
dB
Document No. P11674EJ1V0DS00 (1st edition)
Date Published August 1996 P
Printed in Japan
©
1996