2SC3585 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3585
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR
DESCRIPTION
The 2SC3585 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. The
2SC3585 features excellent power gain with very low-noise figures. The
2SC3585 employs direct nitride passivated base surface process (DNP
process) which is an NEC proprietary new fabrication technique which
provides excellent noise figures at high current values. This allows
excellent associated gain and very wide dynamic range.
FEATURES
• NF
1.8 dB TYP.
• Ga
9 dB TYP.
@f = 2.0 GHz
@f = 2.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0

A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0

A VEB = 1 V, IC = 0
DC Current Gain
hFE *
50
100
250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10
GHz VCE = 6 V, IC = 10 mA
Feed-Back Capacitance
Insertion Power Gain
Cre **
0.3
0.8
pF VCB = 10 V, IE = 0, f = 1.0 MHz

S21e
²
6.0
8.0
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
10
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R43/Q *
R44/R *
R45/S *
Marking
R43
R44
R45
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10361EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
©
1984