2SC3582 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3582
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3582 is an NPN epitaxial silicon transistor designed for use in
low-noise and small signal amplifiers from VHF band to UHF band. Low-
noise figure, high gain, and high current capability achieve a very wide
dynamic range and excellent linearity. This is achieved by direct nitride
passivated base surface process (DNP process) which is an NEC
proprietary new fabrication technique.
PACKAFE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• NF
1.2 dB TYP.
• Ga
12 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
600
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
50
100
Gain Bandwidth Product
fT
8
Feed-Back Capacitance
Insertion Power Gain
Cre
0.4

S21e
²
9
11
Maximum Available Gain
MAG
13
Noise Figure
NF
1.2
hFE Classification
Class
K
Marking
K
hFE
50 to 250
MAX.
1.0
1.0
250
0.9
2.5
0.5
(0.02)
1.27
(0.05)
2.54
(0.1)
123
1. Base
EIAJ : SC-43B
2. Emitter JEDEC : TO-92
3. Collector IEC : PA33
UNIT

A

A
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1 V, IC = 0
VCE = 8 V, IC = 20 mA
VCE = 8 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IC = 20 mA, f = 1.0 GHz
VCE = 8 V, IE = 7 mA, f = 1.0 GHz
Document No. P10359EJ2V1DS00 (2nd edition)
Date Published March 1997 N
Printed in Japan
©
1984