2SC3569 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC3569
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC3569 is a mold power transistor developed for high-
voltage high-speed switching, and is ideal for use in drivers such as
switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Low collector saturation voltage:
VCE(sat) = 1.0 V MAX. (@ 0.7 A)
• Fast switching speed:
tf ≤ 1.0 µs MAX. (@ 0.7 A)
• Wide base reverse-bias SOA:
VCEX(SUS) = 450 V MIN. (@ 0.5 A)
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
500
V
Collector to emitter voltage
VCEO
400
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (pulse)
IC(pulse)*
4.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16187EJ1V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928