2SC3357 Datasheet, PDF (1/8 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC3357
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC3357 is an NPN silicon epitaxial transistor designed for
low noise amplifier at VHF, UHF and CATV band.
PACKAGE DIMENSIONS
(Unit: mm)
It has large dynamic range and good current characteristic.
FEATURES
4.5±0.1
1.6±0.2
1.5±0.1
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V,
IC = 7 mA, f = 1.0 GHz
NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V,
IC = 40 mA, f = 1.0 GHz
• Large PT in Small Package
PT : 2 W with 16 cm² × 0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
ECB
0.42
±0.06
0.42±0.06
1.5 0.47
±0.06
3.0
0.41
−0.03
+0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT*
1.2
W
Thermal Resistance
Rth(j-a)*
62.5
°C/W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150 °C
* mounted on 16 cm² × 0.7 mm Ceramic Substrate
Document No. P10357EJ4V1DS00 (4th edition)
Date Published March 1997 N
Printed in Japan
©
1985