2SC3356 Datasheet, PDF (1/8 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER(NPN SILICON EPITAXIAL TRANSISTOR)

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
• High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
1.0

A VCB = 10 V, IE = 0
1.0

A VEB = 1.0 V, IC = 0
DC Current Gain
hFE*
50
120
300
VCE = 10 V, IC = 20 mA
Gain Bandwidth Product
fT
7
GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance
Insertion Power Gain
Cre**

S21e
²
0.55
1.0
11.5
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.1
2.0
dB VCE = 10 V, IC = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R23/Q *
R24/R *
R25/S *
Marking
R23
R24
R25
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
©
1985