2SC3355 Datasheet, PDF (1/8 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC3355
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise
amplifier at VHF, UHF and CATV band.
It has lange dynamic range and good current characteristic.
PACKAGE DIMENSIONS
in millimeters (inches)
5.2 MAX.
(0.204 MAX.)
FEATURES
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP. @VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG = 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
0.5
(0.02)
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
100
mA
Total Power Dissipation
PT
600
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
50
120
Gain Bandwidth Product
fT
6.5
Output Capacitance
Insertion Power Gain
Cob

S21e
²
0.65
9.5
Noise Figure
NF
1.1
Noise Figure
NF
1.8
hFE Classification
Class
K
Marking
K
hFE
50 to 300
MAX.
1.0
1.0
300
1.0
3.0
1.27
(0.05)
2.54
(0.1)
123
1. Base
EIAJ : SC-43B
2. Emitter JEDEC : TO-92
3. Collector IEC : PA33
UNIT

A

A
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 10 V, IE = 0
VEB = 1.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 7 mA, f = 1.0 GHz
VCE = 10 V, IC = 40 mA, f = 1.0 GHz
Document No. P10355EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
1985