2SC2954 Datasheet, PDF (1/8 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
2SC2954
NPN SILICON EPITAXIAL TRANSISTOR
POWER MINI MOLD
DESCRIPTION
The 2SC2954 is an NPN epitaxial silicon transistor disigned for
low noise wide band amplifier and buffer amplifier of OSC, for VHF
and CATV bnad.
FEATURES
• Low Noise and High Gain.
f = 200 MHz, 500 MHz
NF: 2.3 dB, 2.4 dB

S21e
: 20 dB, 12.5 dB
• Large PT in Small Package.
PT: 2 W with 16 cm²  0.7 mm Ceramic Substrate.
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
35
V
Collector to Emitter Voltage VCEO
18
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
150
mA
Total Power Dissipation
Termal Resistance
PT*
Rth(j-a)*
2.0
W
62.5
C/W
Junction Temperature
Storage Temperature
Tj
150
C
Tstg
65 to +150 C
* With 16 cm²  0.7 mm
Ceramic Substrate
PACKAGE DIMENSIONS
(Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
ECB
0.42
±0.06
1.5 0.47
±0.06
3.0
0.42±0.06
0.41
−0.03
+0.05
Term, Connection
E : Emitter
C : Collector (Fin)
B : Base
(SOT-89)
Document No. P10405EJ3V0DS00 (3rd edition)
(Previous No. TC-1458A)
Date Published March 1997 N
Printed in Japan
©
1994