2SC2885 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING

DATA SHEET
SILICON TRANSISTORS
2SC2885, 2946, 2946(1)
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-VOLTAGE HIGH-SPEED SWITCHING
The 2SC2885, 2946, and 2946(1) are high-voltage high-speed switching power transistors featuring a small
package (MP-3) which is suitable for high-density mounting. These transistors are ideal for drivers in DC/DC
converters and switching regulators.
There are three types of transistors selectable according to the reliability requirments: 2SC2946 and 2946(1) for
industrial use, 2SC2885 for general use. The 2SC2946(1) is produced with leads so as to enable mounting directly in
a hybrid IC.
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
330
V
Collector to emitter voltage
VCEO
200
V
Emitter to base voltage
VEBO
7.0
V
Collector current (DC)
IC(DC)
2.0
A
Collector current (pulse)
IC(pulse)*
4.0
A
Base current (DC)
IB(DC)
1.0
A
Total power dissipation
PT (Tc = 25°C)
15
W
Total power dissipation
PT (Ta = 25°C)
600
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16135EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928