2SC2351 Datasheet, PDF (1/4 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC2351
HIGH FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• NF
1.5 dB TYP.
• MAG
14 dB TYP.
@ f = 1.0 GHz
@ f = 1.0 GHz
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
Collector Current
IC
70
mA
Total Power Dissipation
PT
250
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150 °C
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
1
3
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTIC
SYMBOL MIN. TYP.
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
40
Gain Bandwidth Product
fT
4.5
Output Capacitance
Insertion Power Gain
Cob
S21e²
9
0.75
11
Noise Figure
NF
1.5
Maximum Available Gain
MAG
14
MAX.
0.1
0.1
200
1.0
3.0
UNIT
µA
µA
GHz
pF
dB
dB
dB
TEST CONDITIONS
VCB = 15 V, IE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 20 mA
VCE = 10 V, IC = 20 mA
VCB = 10 V, IE = 0, f = 1.0 MHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
VCE = 10 V, IC = 5 mA, f = 1.0 GHz
VCE = 10 V, IC = 20 mA, f = 1.0 GHz
hFE Classification
Class
E/P *
F/Q *
Marking
R2
R3
hFE
40 to 120
100 to 200 * Old Specification / New Specification
Document No. P10350EJ3V1DS00 (3rd edition)
Date Published March 1997 N
Printed in Japan
©
1984