2SC2335 Datasheet, PDF (1/6 Pages) NEC – NPN SILICON TRIPLE DIFFUSED TRANSISTOR FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SC2335
NPN SILICON TRIPLE DIFFUSED TRANSISTOR
FOR HIGH-SPEED HIGH-VOLTAGE SWITCHING
The 2SC2335 is a mold power transistor developed for high-speed
high-voltage switching, and is ideal for use as a driver in devices such
as switching regulators, DC/DC converters, and high-frequency power
amplifiers.
FEATURES
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A
• Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A
• Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
Ratings Unit
500
V
400
V
7.0
V
7.0
A
15
A
3.5
A
40
W
1.5
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Part No.
2SC2335
Package
TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14861EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928