2SC1927 Datasheet, PDF (1/4 Pages) NEC – NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE

DATA SHEET
SILICON TRANSISTOR
2SC1927
NPN SILICON EPITAXIAL DUAL TRANSISTOR
FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING
INDUSTRIAL USE
DESCRIPTION
The 2SC1927 is an NPN silicon epitaxial dual transistor that
consists of two chips equivalent to the 2SC1275, and is designed for
differential amplifier and ultra-high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
PARAMETER
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Collector Dissipation
Total Power Dissipation
Junction Temperature
Storage Temperature
SYMBOL RATINGS UNIT
VCBO
30
V
VCEO
14
V
VEBO
3.0
V
IC
50
mA
PC
200 mW/unit
PT
300
mW
Tj
200
˚C
Tstg
–65 to +200 ˚C
PACKAGE DIMENSIONS
(in millimeters)
5.0 MIN.
3.5
+0.3
–0.2
5.0 MIN.
4
3
5
2
6
1
PIN CONNECTIONS
4
3
1C
2C
6
1
1B
2B
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
hFE Ratio
Difference of Base to Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICES
IEBO
hFE
hFE1/hFE2
∆VBE
fT
Cob
TEST CONDITIONS
VCE = 15 V, RBE = 0
VEB = 2.0 V, IC = 0
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA *¹
VCE = 10 V, IC = 10 mA
VCE = 10 V, IC = 10 mA *²
VCB = 10 V, IE = 0, f = 1.0 MHz *³
MIN.
25
0.8
1.5
5
2
1E 2E
TYP. MAX.
50
50
80
200
1.0
30
2.0
1.1
1.5
UNIT
nA
nA
mV
GHz
pF
* 1. hFE1 is the smaller hFE value of the 2 transistors.
2. Sampling check shall be done on a production lot base using a TO-18 packaged device (equivalent to the
2SC1275).
3. Measured with a 3-terminal bridge, terminals other than the collector and base of the device under test should
be connected to the guard terminal of the bridge.
Document No. P11671EJ1V0DS00 (1st edition)
Date Published July 1996 P
Printed in Japan
©
1996