2SC1623 Datasheet, PDF (1/6 Pages) NEC – AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD

DATA SHEET
SILICON TRANSISTOR
2SC1623
AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
MINI MOLD
FEATURES
• High DC Current Gain: hFE = 200 TYP.
(VCE = 6.0 V, IC = 1.0 mA)
• High Voltage: VCEO = 50 V
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Current (TA = 25 ˚C)
Collector to Base Voltage
VCBO
60
V
Collector to Emitter Voltage VCEO
50
V
Emitter to Base Voltage
VEBO
5.0
V
Collector Current (DC)
IC
100 mA
Maximum Power Dissipation
Total Power Dissipation
at 25 ˚C Ambient Temperature PT
200 mW
Maximum Temperatures
Junction Temperature
Tj
150
˚C
Storage Temperature Range Tstg –55 to +150 ˚C
PACKAGE DIMENSIONS
in millimeters
2.8 ± 0.2
1.5
0.65
+0.1
– 0.15
2
1
3
Marking
ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Saturation Voltage
Base to Saturation Voltage
Base Emitter Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
fT
Cob
MIN.
90
0.55
* Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2 %
TYP.
200
0.15
0.86
0.62
250
3.0
1: Emitter
2: Base
3: Collector
MAX.
0.1
0.1
600
0.3
1.0
0.65
UNIT
µA
µA
V
V
V
MHz
pF
TEST CONDITIONS
VCB = 60 V, IE = 0
VEB = 5.0 V, IC = 0
VCE = 6.0 V, IC = 1.0 mA*
IC = 100 mA, IB = 10 mA*
IC = 100 mA, IB = 10 mA*
VCE = 6.0 V, IC = 1.0 mA*
VCE = 6.0 V, IE = –10 mA
VCB = 6.0 V, IE = 0, f = 1.0 MHz
hFE Classification
Marking
hFE
L4
90 to 180
L5
135 to 270
L6
200 to 400
L7
300 to 600
Document No. TC-1481C
(O.D. No. TC-5172C)
Date Published July 1995 P
Printed in Japan
©
1984