2SB601 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
Collector current
Collector current
VEBO
IC(DC)
IC(pulse)*
−7.0
V
+–5.0
A
+–8.0
A
Base current
IB(DC)
−0.5
A
Total power dissipation
PT (Ta = 25°C)
1.5
W
Total power dissipation
PT (Tc = 25°C)
30
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
&211(&7,21
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928