2SB1669 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SB1669
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SB1669 is a power transistor that can be directly driven from
the output of an IC. This transistor is ideal for OA and FA equipment
such as motor and solenoid drivers.
FEATURES
• High DC current amplifier rate
hFE ≥ 100 (VCE = −5.0 V, IC = −0.5 A)
• Z type available for surface mounting supported prodcuts
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms,
duty cycle ≤ 50%
(TC = 25°C)
(TA = 25°C)
Ratings Unit
−60
V
−60
V
−7.0
V
−3.0
A
−6.0
A
−1.0
A
25
W
1.5
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Part No.
2SB1669
2SB1669-S
2SB1669-Z
Package
TO-220AB
TO-262
TO-220SMD
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15410EJ2V0DS00 (2nd edition)
Date Published July 2002 N CP(K)
©
Printed in Japan
21090928