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2SB1657 Datasheet, PDF (1/8 Pages) NEC – AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS | |||
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DATA SHEET
SILICON TRANSISTOR
2SB1657
AUDIO FREQUENCY AMPLIFIER, SWITCHING
PNP SILICON EPITAXIAL TRANSISTORS
FEATURES
⢠Low VCE(sat)
VCE(sat) = â0.15 V Max (@lC/lB = 0.5 A/25 mA)
⢠High DC Current Gain
hFE = 150 to 600 (@VCE = â2.0 V, lC = â0.5 A)
ABSOLUTE MAXIMUM RATINGS
Maximum Voltage and Current (TA = 25 °C)
Collector to Base Voltage
VCB0
â30 V
Collector to Emitter Volteage
VCE0
â30 V
Emitter to Base Voltage
VEB0
â6.0 V
Collector Current (DC)
IC(DC)
â5.0 A
Collector Current (Pulse)*
IC(Pulse)
â8.0 A
Base Current (DC)
IB(DC)
â1.0 A
* PW ⤠10ms, Duty Cycle ⤠10 %
Maximum Power Dissipation
Total Power Dissipation (TC = 25 °C) PT
10 W
Total Power Dissipation (TA = 25 °C) PT
1.0 W
Maximum Temperature
Junction Temperature
Tj
150 °C
Storage Temperature
Tstg â55 to 150 °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
characteristics
Collector Cutoff Currnet
Emitter Cutoff Current
DC Current Gain
DC Current Gain
Collector Saturation Voltage
Collector Saturation Voltage
Collector Saturation Voltage
Collector Saturation Voltage
Base Saturation Voltage
Gain Bandwidth Product
Output Capacitance
SYMBOL
ICB0
IEB0
hFE1
hFE2
VCE(sat)1
VCE(sat)2
VCE(sat)3
VCE(sat)4
VBE(sat)
fT
Cob
TEST CONDITIONS
VCB = â30 V, IE = 0
VEB = â6.0 V, IC = 0
VCE = â2.0 V, IC = â0.5 A
VCE = â2.0 V, IC = â3.0 A
IC = â0.5 A, IB = â25 mA
IC = â1.0 A, IB = â50 mA
IC = â2.0 A, IB = â100 mA
IC = â3.0 V, IB = â75 mA
IC = â1.0 A, IB = â50 mA
VCE = â10 V, IE = â50 mA
VCB = â10 V, IE = 0, f = 1 MHz
PACKAGE DIMENSIONS
in millimeters (inches)
8.5 MAX.
(0.334 MAX.)
2.8 MAX.
(0.110 MAX.)
Ï 3.2 ± 0.2 (Ï 0.126)
1 23
1.2
(0.047)
0.8+â00..0058
(0.031)
2.3 2.3
(0.090) (0.090)
0.55+â00..0058
(0.021)
1.2
(0.047)
1. Emitter
2. Collector connected to mounting plane
3. Base
MIN.
150
70
TYP.
â0.08
â0.13
â0.24
â0.46
â0.83
75
60
MAX.
â100
â100
600
â0.15
â0.25
â0.40
â1.0
â1.50
UNIT
nA
nA
â
â
V
V
V
V
V
MHz
pF
The information in this document is subject to change without notice.
Document No. D10627EJ1V0DS00 (1st edition)
Date Published June 1996 P
Printed in Japan
©
1996
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