2SB1572 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR

DATA SHEET
PNP SILICON EPITAXIAL TRANSISTOR
2SB1572
PNP SILICON EPITAXIAL TRANSISTOR
FEATURES
• Low VCE(sat): VCE(sat)1 ≤ −0.4 V
• Complementary to 2SD2403
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to Base Voltage
VCBO
−80
V
Collector to Emitter Voltage
VCEO
−60
V
Emitter to Base Voltage
VEBO
−6.0
V
Collector Current (DC)
Collector Current (pulse) ^Note1
IC(DC)
−3.0
A
IC(pulse)
−5.0
A
Base Current (DC)
Base Current (pulse) ^Note1
Total Power Dissipation ^Note2
IB(DC)
−0.2
A
IB(pulse)
−0.4
A
PT
2.0
W
Junction Temperature
Tj
150
°C
Storage Temperature Range
Tstg –55 to + 150 °C
Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%
2. When mounted on ceramic substrate of 16 cm² x 0.7 mm
PACKAGE DRAWING (Unit: mm)
4.5±0.1
1.6±0.2
1.5±0.1
C
E
B
0.42
±0.06
1.5 ^0.47
±0.06
3.0
0.42
±0.06
E: Emitter
C: Collector (Fin)
B: Base
0.41
+0.03
–0.05
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Collector Cut-off Current
ICBO
VCB = −80 V, IE = 0
Emitter Cut-off Current
DC Current Gain ^Note
IEBO
VEB = −6.0 V, IC = 0
hFE1
VCE = −2.0 V, IC = −0.1 A
Base to Emitter Voltage ^Note
Collector Saturation Voltage ^Note
Collector Saturation Voltage ^Note
Base Saturation Voltage ^Note
hFE2
VBE
VCE(sat)1
VCE(sat)2
VBE(sat)
VCE = −2.0 V, IC = −1.0 A
VCE = −2.0 V, IC = −0.1 A
IC = −2.0 A, IB = −0.1 A
IC = −3.0 A, IB = −0.15 A
IC = −2.0 A, IB = −0.1 A
Gain Bandwidth Product
fT
VCE = −10 V, IE = 0.3 A
Output Capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
Turn-on Time
ton
IC = −1.0 A, VCC = −10 V,
Storage Time
tstg
RL = 5.0 Ω, IB1 = −IB2 = −0.1 A,
Fall Time
tf
Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2%
MIN.
80
100
−0.63
TYP.
200
−0.685
−0.2
−0.3
−0.89
160
45
155
510
35
MAX.
−100
−100
400
−0.73
−0.4
−0.6
−1.2
UNIT
nA
nA
−
−
V
V
V
V
MHz
pF
ns
ns
ns
hFE CLASSFICATION
Marking
HX
hFE2
100 to 200
HY
160 to 320
HZ
200 to 400
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11204EJ3V0DS00 (3rd edition)
Date Published July 2001 NS CP(K)
©
Printed in Japan
2001