2SA675 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR DRIVING FLUORESCENT INDICATOR PANNEL

DATA SHEET
SILICON TRANSISTOR
2SA675
PNP SILICON EPITAXIAL TRANSISTOR
FOR DRIVING FLUORESCENT INDICATOR PANNEL
The 2SA675 is a resin sealed mold transistor and is ideal for
dynamic drivers of counting indicator pannel such as fluorescent
indicator pannel due to high voltage.
• High voltage
VCBO > −80 V, VCER > −80 V
• Excellent linearity for current of DC current gain
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−80
V
Collector to emitter voltage
VCER *
−80
V
Emitter to base voltage
VEBO
−5.0
V
Collector current
IC
−100
mA
Total power dissipation
PT
250
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
* RBE = 30 kΩ
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
Collector saturation voltage
Base saturation voltage
Gain bandwidth product
Output capacitance
Storage time
Symbol
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
tstg
Conditions
VCB = –60 V, IE = 0
VEB = –3.0 V, IC = 0
VCE = –3.0 V, IC = –1.0 mA
VCE = –3.0 V, IC = –20 mA
IC = –20 mA, IB = –1.0 mA
IC = –20 mA, IB = –1.0 mA
VCE = –6.0 V, IE = 10 mA
VCB = –10 V, IE = 0, f = 1.0 MHz
Refer to the test circuit.
PACKAGE DRAWING (UNIT: mm)
MIN.
60
50
100
TYP.
120
120
−0.10
−0.74
170
4.5
0.5
MAX.
−1.0
−1.0
300
−1.50
−1.20
10
1.0
Unit
µA
µA
V
V
MHz
pF
µs
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16146EJ3V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928