2SA1978 Datasheet, PDF (1/10 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

PRELIM^DIN^AA^TR^AY^SD^HA^ET^EA^T SHEET
Silicon Transistor
2SA1978
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
• _{High fT}
fT = 5.5 GHz TYP.
• _{| S21e |} ² _{= 10.0 dB TYP. @f = 1.0 GHz, VCE = −10 V, IC = −15 mA}
• _{High speed switching characteristics}
• _{Equivalent NPN transistor is the 2SC2351.}
• _{Alternative of the 2SA1424.}
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCB0
VCE0
VEB0
IC
PT
Ti
Tstg
−20
V
−12
V
−3.0
V
−50
mA
200
mW
150
°C
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C)
PACKAGE DIMENSIONS
(in milimeters)
2.8+_0.2
1.5
0.65
+0.1
–0.15
2
1
3
Marking
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking: T93
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
ICB0
VCB = −10 V
IEB0
VEB = −2 V
hFE
VCE = −10 V, IC = −15 mA
20
fT
VCE = −10 V, IC = −15 mA
4.0
Cre*
VCB = −10 V, IE = 0, f = 1 MHz
| S21e | ² VCE = −10 V, IC = −15 mA, f = 1.0 GHz
8.0
NF
VCE = −10 V, IC = −3.0 mA, f = 1 GHz
−0.1
−0.1
40
100
5.5
0.5
1
10.0
2.0
3
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
Unit
µA
µA
GHz
pF
dB
dB
h_FE Classification
Rank
Marking
hFE
FB
T93
20 to 100
Document No. P11028EJ1V0DS00 (1st edition)
Date Published April 1996 P
Printed in Japan
©
1996