2SA1742 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1742
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1742 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is ideal
for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 MIN. @VCE = −2.0 V, IC = −1.5 A
VCE(sat) ≥ −0.3 V MAX. @IC = −4.0 V, IB = −0.2 A
• Full-mold package that does not require an insulating board or
bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
Ratings Unit
−100
V
−60
V
−7.0
V
−7.0
A
−14
A
−3.5
A
30
W
2.0
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Part No.
2SA1742
Package
Isolated TO-220
(Isolated TO-220)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14858EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
2002