2SA1741 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1741
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1741 is a power transistor developed for high-speed
switching and features a high hFE at low VCE(sat). This transistor is
ideal for use as a driver in DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
FEATURES
• High hFE and low VCE(sat):
hFE ≥ 100 (VCE = −2 V, IC = −1 A)
VCE(sat) ≤ 0.3 V (IC = −3 A, IB = −0.15 A)
• Full-mold package that does not require an insulating board or
bushing when mounting.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−60
V
Emitter to base voltage
VEBO
−7.0
V
Collector current (DC)
IC(DC)
−5.0
A
Collector current (pulse)
IC(pulse)*
−10
A
Base current (DC)
IB(DC)
−2.5
A
Total power dissipation
PT (Tc = 25°C)
25
W
Total power dissipation
PT (Ta = 25°C)
2.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 300 µs, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Base
2. Collector
3. Emitter
.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16125EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
2002