2SA1720 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

DATA SHEET
DARLINGTON POWER TRANSISTOR
2SA1720
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1720 is a high-speed Darlington power transistor.
This transistor is ideal for high-precision control such as PWM
control for pulse motors or brushless motors in OA and FA equipment.
FEATURES
• Mold package that does not require an insulating board or insulation
bushing
• On-chip C-to-E reverse diode
• Fast switching speed
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 10 ms,
duty cycle ≤ 50%
TC = 25°C
TA = 25°C
Ratings Unit
−100
V
−100
V
−8.0
V
−10, +3.0 A
+–20
A
−1.0
A
25
W
2.0
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Part No.
2SA1720
Package
Isolated TO-220
EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14857EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
2002