2SA1714 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL POWER TRANSISTOR (DARLINGTON CONNECTION) FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON TRANSISTOR
2SA1714
PNP SILICON EPITAXIAL POWER TRANSISTOR
(DARLINGTON CONNECTION)
FOR HIGH-SPEED SWITCHING
The 2SA1714 is a high-speed darlington power transistor. This
transistor is ideal for high-precision control such as PWM control for
pulse mortors or blushless mortor of OA and FA equipment.
FEATURES
• High DC current amplifiers due to darlington connection
• Large current capacitance and low VCE(sat)
• TO-126 power transistor with high power dissipation
• Complementary transistor with 2SC4342
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−100
V
Collector to emitter voltage
VCEO
−100
V
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
VEBO
IC(DC)
IC(pulse)*
−8.0
V
+–3.0
A
+–6.0
A
Base current (DC)
IB(DC)
−0.3
A
Total power dissipation
PT (Ta = 25°C)
1.3
W
Total power dissipation
PT (Tc = 25°C)
12
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
PACKAGE DRAWING (UNIT: mm)
Electrode Connection
1. Emitter
2. Collector
3. Base
4. Fin (collector)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16124EJ1V0DS00 (1st edition)
Date Published April 2002 N CP(K)
©
Printed in Japan
2002