2SA1652 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

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The 2SA1652 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation. This transistor is ideal for use in switching power
supplies, DC/DC converters, motor drivers, solenoid drivers, and
other low-voltage power supply devices, as well as for high-current
switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) ≤ −0.3 V (MAX.) @IC = −6 A
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
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ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
PT
Tj
Tstg
Conditions
PW ≤ 300 µs, duty cycle ≤ 10%
Tc = 25°C
Ta = 25°C
Ratings
Unit
−150
V
−100
V
−7.0
V
−10
A
−20
A
−6.0
A
25
W
2.0
W
150
°C
−55 to +150
°C
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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©
2002