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2SA1647 Datasheet, PDF (1/6 Pages) NEC – SILICON POWER TRANSISTOR | |||
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The 2SA1647 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage.
This transistor is ideal for use in switching regulators, DC/DC
converters, motor drivers, solenoid drivers, and other low-voltage
power supply devices, as well as for high-current switching.
FEATURES
⢠Available for high-current control in small dimension
⢠Z type is a lead processed product and is deal for mounting a
hybrid IC.
⢠Low collector saturation voltage:
VCE(sat) = â0.3 V MAX. (@IC = â3 A)
⢠Fast switching speed:
tf = 0.4 µs MAX. (@IC = â3 A)
⢠High DC current gain and excellent linearity
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
â150
V
Collector to emitter voltage
VCEO
â100
V
Base to emitter voltage
VEBO
â7.0
V
Collector current (DC)
IC(DC)
â5.0
A
Collector current (pulse)
IC(pulse)*
â10
A
Base current (DC)
IB(DC)
â2.5
A
Total power dissipation
PT (Tc = 25 °C)
18
W
Total power dissipation
PT (TA = 25 °C) 1.0**, 2.0***
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
â55 to +150
°C
*: PW ⤠10 ms, duty cycle ⤠50%
**: Printing board mounted
***: 7.5 mm à 0.7 mm ceramic board mounted
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
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2002
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