2SA1646 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1646, 2SA1646-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1646 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• Mold package that does not require an insulating board or
insulation bushing
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −6 A
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices”
(Document No. C11531E) published by NEC Corporation to know
the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Conditions
Ratings Unit
Collector to base voltage
VCBO
−150
V
Collector to emitter voltage VCEO
−100
V
Emitter to base voltage
VEBO
−7.0
V
Collector current
ID(DC)
−10
A
Collector current
IC(pulse) PW ≤ 300 µs,
−20
A
duty cycle ≤ 10%
Base current
IB(DC)
−6.0
A
Total power dissipation
PT Tc = 25°C
40
W
Total power dissipation
PT Ta = 25°C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150 °C
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Electrode Connection
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16120EJ1V0DS00 (1st edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002