2SA1645 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1645, 2SA1645-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1645 is a mold power transistor developed for high-
speed switching and features a very low collector-to-emitter
saturation voltage. This transistor is ideal for use in switching
power supplies, DC/DC converters, motor drivers, solenoid drivers,
and other low-voltage power supply devices, as well as for high-
current switching.
FEATURES
• Fast switching speed
• Low collector-to-emitter saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −4 A
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Collector to base voltage
Collector to emitter
voltage
Emitter to base voltage
Collector current
Collector current
Base current
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
Conditions
VEBO
ID(DC)
IC(pulse)
PW ≤ 300 µs,
Duty Cycle ≤
10%
IB(DC)
PT Tc = 25 °C
PT Ta = 25 °C
Tj
Tstg
Ratings Unit
−150
V
−100
V
−7.0
V
−7.0
A
−14
A
−3.5
A
35
W
1.5
W
150
°C
−55 to
°C
+150
PACKAGE DRAWING (UNIT: mm)
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15587EJ2V0DS00 (2nd edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002