2SA1615 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTORS
2SA1615, 1615-Z
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation
and are ideal for high-efficiency DC/DC converters due to the fast switching speed.
FEATURES
• Large current capacity:
IC(DC): −10 A, IC(pulse): −15 A
• High hFE and low collector saturation voltage:
hFE = 200 MIN. (@VCE = −2.0 V, IC = −0.5 A)
VCE(sat) ≤ −0.25 V (@IC = −4.0 A, IB = −0.05 A)
QUALITY GRADES
• Standard
Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No. C11531E) published by NEC
Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−30
V
Collector to emitter voltage
VCEO
−20
V
Emitter to base voltage
VEBO
−10
V
Collector current (DC)
IC(DC)
−10
A
Collector current (pulse)
IC(pulse)*
−15
A
Base current (DC)
IB(DC)
−0.5
A
Total power dissipation
PT (Ta = 25°C)**
1.0
W
Total power dissipation
PT (Tc = 25°C)
15
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
** Printing board mounted
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16119EJ1V0DS00 (1st edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002