2SA1221 Datasheet, PDF (1/4 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS

DATA SHEET
SILICON TRANSISTORS
2SA1221, 1222
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS
FEATURES
• Ideal for use of high withstanding voltage current such as TV
vertical deflection output, audio output, and variable power
supplies.
• Complementary transistor with 2SC2958 and 2SC2959
VCEO = 140 V: 2SA1221/2SC2958
VCEO = 160 V: 2SA1222/2SC2959
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
−160
V
Collector to emitter voltage
VCEO
−140/–160
V
Emitter to base voltage
VEBO
−5.0
V
Collector current (DC)
IC(DC)
−500
mA
Collector current (pulse)
IC(pulse)*
−1.0
A
Total power dissipation
PT
1.0
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
* PW ≤ 10 ms, duty cycle ≤ 50%
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector cutoff current
ICBO
VCB = −100 V, IE = 0
Emitter cutoff current
IEBO
VEB = −5.0 V, IC = 0
DC current gain
hFE ** VCE = −2.0 V, IC = −100 mA
DC base voltage
VBE ** VCE = −5.0 V, IC = −20 mA
Collector saturation voltage VCE(sat) ** IC = −1.0 A, IB = −0.2 A
Base saturation voltage
VBE(sat) ** IC = −1.0 A, IB = −0.2 A
Output capacitance
Cob
VCB = −10 V, IE = 0, f = 1.0 MHz
Gain bandwidth product
fT
VCE = −10 V, IE = 20 mA
** Pulse test PW ≤ 350 µs, duty cycle ≤ 2% per pulsed
PACKAGE DRAWING (UNIT: mm)
MIN.
100
−0.6
30
TYP.
150
−0.64
−0.6
−1.1
24
45
MAX.
−200
−200
400
−0.7
−0.9
−0.3
40
Unit
nA
nA
V
V
V
pF
MHz
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16143EJ1V0DS00
Date Published April 2002 N CP(K)
©
Printed in Japan
21090928