2SA1129 Datasheet, PDF (1/6 Pages) NEC – PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING

DATA SHEET
SILICON POWER TRANSISTOR
2SA1129
PNP SILICON EPITAXIAL TRANSISTOR
FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
The 2SA1129 is a mold power transistor developed for mid-speed
switching, and is ideal for use as a ramp driver.
FEATURES
• Large current capacity with small package: IC(DC) = −7.0 A
• Low collector saturation voltage:
VCE(sat) = −0.3 V MAX. @IC = −3.0 A, IB = −0.1 A
• Complementary transistor: 2SC2654
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
Ratings Unit
−30
V
−30
V
−7.0
V
−7.0
A
−15
A
−3.5
A
40
W
1.5
W
150
°C
−55 to +150 °C
ORDERING INFORMATION
Part No.
2SA1129
Package
TO-220AB
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14856EJ2V0DS00 (2nd edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002