2SA1008 Datasheet, PDF (1/6 Pages) NEC – SILICON POWER TRANSISTOR

DATA SHEET
SILICON POWER TRANSISTOR
2SA1008
PNP SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SA1008 is a mold power transistor developed for high-speed
switching, and is ideal for use as a driver in devices such as switching
regulators, DC/DC converters, and high-frequency power amplifiers.
ORDERING INFORMATION
Part No.
2SA1008
Package
TO-220AB
FEATURES
• Low collector saturation voltage
• Fast switching speed
• Complementary transistor: 2SC2331
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT
Tj
Tstg
Conditions
PW ≤ 300 µs,
duty cycle ≤ 10%
TC = 25°C
TA = 25°C
Ratings Unit
−100
V
−100
V
−7.0
V
−2.0
A
−4.0
A
−1.0
A
15
W
1.5
W
150
°C
−55 to +150 °C
(TO-220AB)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D14866EJ2V0DS00 (2nd edition)
©
Date Published April 2002 N CP(K)
Printed in Japan
2002