1SS305 Datasheet, PDF (1/4 Pages) NEC – SILICON SWITCHING DIODES

DATA SHEET
SILICON SWITCHING DIODE
1SS305
HIGH SPEED SWITCHING
SILICON EPITAXIAL DIODE
FEATURES
• Low capacitance: Ct = 4.0 pF MAX.
• High speed switching: trr = 3.0 ns MAX.
• Wide applications including switching, limitter, clipper.
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage
VRM
DC Reverse Voltage
VR
Peak Forward Current
IFM
Average Rectified Current
IO
DC Forward Current
IF
Maximum Temperatures
Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance
Junction to Ambient
Rth(j-a)
100
V
100
V
300
mA
100
mA
100
mA
150
°C
–55 to + 150 °C
0.85 °C/mW
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
2
1
3
Marking
CONNECTION DIAGRAM (Top View)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Forward Voltage
VF1
IF = 10 mA
VF2
IF = 50 mA
VF3
IF = 100 mA
Reverse Current
IR
VR = 100 V
Capacitance
Ct
VR = 0 V, f = 1.0 MHz
Reverse Recovery Time
trr
IF = 10 mA, VR = 6 V, RL = 100 Ω,
See Test Circuit.
2
3
1. N.C.
1
2. Anode
3. Cathode
Marking : A14
MIN. TYP. MAX. UNIT
720 850 mV
850 1000 mV
950 1200 mV
1.0 µA
2.0 4.0 pF
3.0 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16310EJ2V0DS00 (2nd edition)
(Previous No. DC-2102)
©
Date Published July 2002 NS CP(K)
Printed in Japan
1987