1SS303 Datasheet, PDF (1/4 Pages) NEC – SILICON SWITCHING DIODES

DATA SHEET
SILICON SWITCHING DIODE
1SS303
HIGH SPEED SWITCHING
SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE
FEATURES
• Low capacitance: Ct = 2.5 pF TYP.
• High speed switching: trr = 4.0 ns MAX.
• Wide applications including switching, limitter, clipper.
• Double diode configuration assures economical use.
PACKAGE DIMENSIONS (Unit: mm)
2.1±0.1
1.25±0.1
ABSOLUTE MAXIMUM RATINGS
Maximum Voltages and Currents (TA = 25°C)
Peak Reverse Voltage
VRM
DC Reverse Voltage
VR
Surge Current (1 µs) ^Note
IFSM
Surge Current (1 µs)
IFSM
Peak Forward Current ^Note
IFM
Peak Forward Current
IFM
Average Rectified Current ^Note
IO
Average Rectified Current
IO
Maximum Temperatures
Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance
Junction to Ambient ^Note
Rth(j-a)
Junction to Ambient
Rth(j-a)
Note Both diodes loaded simultaneously.
75
V
50
V
6.0
A
4.0
A
450
mA
300
mA
150
mA
100
mA
150
°C
–55 to + 150 °C
1.0
°C/mW
0.85 °C/mW
2
1
3
Marking
CONNECTION DIAGRAM (Top View)
2
3
1. Cathode
1
2. Cathode
3. Anode
Marking : A4
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Forward Voltage
VF1
IF = 10 mA
0.72 1.0 V
VF2
IF = 50 mA
0.88 1.1 V
VF3
IF = 100 mA
1.0 1.2 V
Reverse Current
IR
VR = 50 V
0.1 µA
Capacitance
Ct
VR = 0 V, f = 1.0 MHz
2.5 4.0 pF
Reverse Recovery Time
trr
See Test Circuit.
4.0 ns
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16308EJ2V0DS00 (2nd edition)
(Previous No. DC-2100)
©
Date Published July 2002 NS CP(K)
Printed in Japan
1987