NCE9435 Datasheet, PDF (2/7 Pages) Wuxi NCE Power Semiconductor Co., Ltd – NCE P-Channel Enhancement Mode Power MOSFET

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Pb Free Product
NCE9435
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
I_DSS
V_DS=-24V,V_GS=0V
I_GSS
V_GS=±20V,V_DS=0V
-1
μA
±100 nA
V_GS(th)
R_DS(ON)
g_FS
V_DS=V_GS,I_D=-250μA
V_GS=-10V, I_D=-5.1A
V_GS=-4.5V, I_D=-4.2A
V_DS=-15V,I_D=-4.5A
-1
-3
V
46
53
mΩ
70
85
mΩ
4
7
S
C_lss
C_oss
C_rss
V_DS=-15V,V_GS=0V,
F=1.0MHz
1040
PF
420
PF
150
PF
t_d(on)
15
nS
t_r
V_DD=-15V, ID=-1A,
13
nS
t_d(off)
V_GS=-10V,R_GEN=6Ω
58
nS
t_f
21
nS
Q_g
12
nC
Q_gs
V_DS=-15V,I_D=-5.1A,V_GS=-10V
2.2
nC
Q_gd
3
nC
V_SD
V_GS=0V,I_S=-1.7A
-1.2
V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
Wuxi NCE Power Semiconductor Co., Ltd
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